PART |
Description |
Maker |
3SK148 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
SGM2016AN |
GaAs N-channel Dual-Gate MES FET From old datasheet system
|
Sony
|
SGM2016 SGM2016M SGM2016P SGM2016M_P |
GaAs N-channel Dual-Gate MES FET From old datasheet system
|
SONY[Sony Corporation]
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
GN1021 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
|
NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1% C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|